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| Datasheet File OCR Text: |
| PROCESS Programmable Unijunction Transistor CP622 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Cathode Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 14,930 PRINCIPAL DEVICE TYPES 2N6027 PLANAR PASSIVATED 27.5 x 27.5 MILS 11 MILS 7.1 x 5.1 MILS 7.1 x 5.1 MILS Al - 30,000A Au - 13,000A BACKSIDE GATE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (4- February 2004) Central TM PROCESS CP622 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (4- February 2004) |
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